The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2018

Filed:

Oct. 31, 2013
Applicant:

Mitsubishi Electric Engineering Company, Limited, Chiyoda-ku, JP;

Inventors:

Yoshiyuki Akuzawa, Chiyoda-ku, JP;

Kiyohide Sakai, Chiyoda-ku, JP;

Toshihiro Ezoe, Chiyoda-ku, JP;

Yuki Ito, Chiyoda-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 1/08 (2006.01); H02M 1/36 (2007.01); H02J 50/12 (2016.01); H02M 7/48 (2007.01); H02J 50/20 (2016.01); H02J 50/05 (2016.01);
U.S. Cl.
CPC ...
H02J 50/12 (2016.02); H02J 50/20 (2016.02); H02M 7/48 (2013.01); H02J 50/05 (2016.02); H02M 2007/4815 (2013.01); H02M 2007/4818 (2013.01); Y02B 70/1441 (2013.01);
Abstract

A resonant type high frequency power supply device provided with a power semiconductor element that performs a switching operation, the power supply device including a second power semiconductor element at least one or more connected in parallel to the power semiconductor element to achieve optimization of parasitic capacitances of the power semiconductor element and the second power semiconductor element itself, and a high frequency pulse drive circuit that transmits a pulse-shaped voltage signal having a high frequency exceeding 2 MHz to the power semiconductor element and the second power semiconductor element to drive the power semiconductor element and the second power semiconductor element.


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