The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2018
Filed:
Sep. 03, 2015
Koninklijke Philips N.v., Eindhoven, NL;
Philipp Henning Gerlach, Ulm, DE;
Roland Aloisius Jaeger, Neu-Ulm, DE;
KONINKLIJKE PHILIPS N.V., Eindhoven, NL;
Abstract
The invention describes a Vertical Cavity Surface Emitting Laser and a method of manufacturing such a Vertical Cavity Surface Emitting Laser. The Vertical Cavity Surface Emitting Laser comprising a first electrical contact (), a substrate (), a first distributed Bragg reflector (), an active layer (), a distributed heterojunction bipolar phototransistor (), a second distributed Bragg reflector () and a second electrical contact (), the distributed heterojunction bipolar phototransistor () comprising a collector layer (), a light sensitive layer (), a base layer () and an emitter layer (), wherein the distributed heterojunction bipolar phototransistor () is arranged such that there is an optical coupling between the active layer () and the distributed heterojunction bipolar phototransistor () for providing an active carrier confinement by means of the distributed heterojunction bipolar phototransistor () such that an optical mode of the Vertical Cavity Surface Emitting Laser is self-positioning in accordance with the active carrier confinement during operation of the Vertical Cavity Surface Emitting Laser. It is the intention of the present invention to provide a VCSEL which can be easily and reliably processed by integrating the distributed heterojunction bipolar phototransistor ().