The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2018
Filed:
Dec. 02, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Sungmin Ahn, Suwon-Si, KR;
Jisu Ryu, Hwaseong-Si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/08 (2006.01); G11C 11/16 (2006.01); H01L 43/12 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); G11C 11/161 (2013.01); H01L 27/228 (2013.01); H01L 43/12 (2013.01);
Abstract
A magnetic memory device can include an upper electrode, a lower electrode and a Magnetic Tunnel Junction (MTJ). The MTJ can include a reference magnetic pattern configured to generate a fixed magnetization and a free magnetic pattern on the reference magnetic pattern configured to generate a switchable magnetization that switches direction between parallel and anti-parallel to the fixed magnetization. A metal pattern can be on the free magnetic pattern and can be configured to conduct an in-plane current and a perpendicular-to-plane to/from the upper electrode.