The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2018
Filed:
Mar. 10, 2016
Dowa Electronics Materials Co., Ltd., Tokyo, JP;
Takehiko Fujita, Tokyo, JP;
Yasuhiro Watanabe, Tokyo, JP;
DOWA ELECTRONICS MATERIALS CO., LTD., Tokyo, JP;
Abstract
A long-life III nitride semiconductor light emitting device and a method of producing the same. A III nitride semiconductor light-emitting device includes an n-type semiconductor layer; a light emitting layer containing at least Al; and a p-type semiconductor layer obtained by sequentially stacking an electron blocking layer, a p-type cladding layer, and a p-type contact layer, in this order. The electron blocking layer is made of AlGaN (0.55≦x≦1.0), the p-type contact layer is made of AlGaN (0≦y≦0.1), the p-type cladding layer is made of AlGaN having an Al content z which gradually decreases over the whole thickness of the p-type cladding layer from the electron blocking layer side toward the p-type contact layer side, and the reduction rate of the Al content z of the p-type cladding layer in the thickness direction is 0.01/nm or more and 0.025/nm or less.