The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2018
Filed:
Oct. 18, 2013
Sun Chemical Corporation, Parsippany, NJ (US);
Ted Kreutz, Roseland, NJ (US);
Jin-An He, Mountain Lakes, NJ (US);
Joel Garcia, North Bergen, NJ (US);
Maura Mostowy-Gallagher, Succasunna, NJ (US);
Graham Robins, Lafox, IL (US);
Monica Liu, Aurora, IL (US);
SUN CHEMICAL CORPORATION, Parsippany, NJ (US);
Abstract
Compositions used in, and methods for, fabricating a rear-passivated silicon solar cell are described. A novel method of opening the back surface for contacting the silicon with a conventional aluminum paste is described. Various novel screen printable etch resists are described. First, such an etch resist can be printed on the rear of a rear-passivated solar cell wafer. The passivation layer can then be removed using a wet etch, and next the etch resist layer can be removed. Further, an additional wet etch step may optionally be used to deepen the opening into the silicon and enhance the BSF (back-surface field). Aluminum paste can then be printed over the entire backside of the now etched cell. The entire cell is then fired. In exemplary embodiments of the present invention, the paste can be chosen so that it will not fire through the passivation layer.