The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2018
Filed:
Nov. 17, 2015
Applicant:
Tyco Electronics Svenksa Holdings Ab, Jarfalla, SE;
Inventors:
Marek Grzegorz Chacinski, Farsta, SE;
Nicolae Pantazi Chitica, Kista, SE;
Assignee:
Mellanox Technologies Ltd., Yokneam, IL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/10 (2006.01); H01L 31/0304 (2006.01); H01L 31/105 (2006.01);
U.S. Cl.
CPC ...
H01L 31/105 (2013.01); H01L 31/03042 (2013.01); H01L 31/03046 (2013.01);
Abstract
A photodetector is disclosed. A first layer of the photodetector has a first semiconductor material having a first band gap energy, a first electric field, and a first doping concentration. A second layer has a second semiconductor material having a second band gap energy higher than the first band gap energy, a non-zero second electric field smaller than the first electric field, and a second doping concentration. The second layer is interfaced with the first layer. A region between the first and second layers has a third doping concentration.