The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2018
Filed:
Dec. 29, 2014
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Young Jae Kim, Incheon-si, KR;
Jin Woo Han, Bucheon-si, KR;
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Abstract
The present disclosure relates to a semiconductor device in which a trench termination structure is applied. There is disclosed a semiconductor device of which structure is partially improved so that a P body area is not formed in an adjacent area of a gate pad. The semiconductor device includes a gate pad formed on a substrate, an active area formed in the substrate and comprising trenches, an isolation area to isolates the gate pad and the active area, and a section of the active area adjacent to the gate pad where a P-body is not formed. According to such the semiconductor device, it is possible to minimize a drain-source leakage current and to stably secure a drain-source breakdown voltage.