The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2018
Filed:
Aug. 03, 2015
Applicant:
Fuji Electric Co., Ltd., Kawasaki-shi, JP;
Inventor:
Naoki Mitamura, Matsumoto, JP;
Assignee:
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 29/0649 (2013.01); H01L 29/0696 (2013.01); H01L 29/1095 (2013.01); H01L 29/66348 (2013.01); H01L 29/402 (2013.01);
Abstract
A trench insulated gate bipolar transistor includes trenches formed in the front surface of a first conductivity type drift layer, a plurality of gate electrodes selectively provided inside the trenches, insulating blocks formed of an insulator, with which the insides of the trenches are filled, one between adjacent gate electrodes, and a second conductivity type collector region formed on a surface of the first conductivity type drift layer on the opposite side from the trenches.
Mitamura, Naoki. (2018). Trench insulated gate bipolar transistor and manufacturing method thereof (U.S. Patent No. 9882035). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9882035
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile