The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2018
Filed:
May. 15, 2015
Young Jin Noh, Suwon-si, KR;
Jae Ho Choi, Suwon-si, KR;
Bio Kim, Seoul, KR;
Kwang Min Park, Seoul, KR;
Jae Young Ahn, Seongnam-si, KR;
Dong Chul Yoo, Seongnam-si, KR;
Seung Hyun Lim, Seoul, KR;
Jeon IL Lee, Suwon-si, KR;
Young Jin Noh, Suwon-si, KR;
Jae Ho Choi, Suwon-si, KR;
Bio Kim, Seoul, KR;
Kwang Min Park, Seoul, KR;
Jae Young Ahn, Seongnam-si, KR;
Dong Chul Yoo, Seongnam-si, KR;
Seung Hyun Lim, Seoul, KR;
Jeon Il Lee, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device includes: a substrate including a channel region; a gate dielectric a tunneling layer, a charge storage layer, and a blocking layer sequentially disposed on the channel region; and a gate electrode disposed on the gate dielectric, wherein the tunneling layer has variations in nitrogen concentrations in a direction perpendicular to the channel region, and has a maximum nitrogen concentration in a position shifted from a center of the tunneling layer toward the charge storage layer.