The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2018
Filed:
May. 12, 2016
Applicant:
Seiko Epson Corporation, Tokyo, JP;
Inventor:
Yukimune Watanabe, Hokuto, JP;
Assignee:
SEIKO EPSON CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/32 (2006.01); H01L 21/02 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/32 (2013.01); H01L 21/02236 (2013.01); H01L 21/02381 (2013.01); H01L 21/02447 (2013.01); H01L 21/02488 (2013.01); H01L 21/02502 (2013.01); H01L 21/02529 (2013.01); H01L 21/02658 (2013.01); H01L 29/1608 (2013.01);
Abstract
A silicon carbide substrate includes a Si substrate (silicon substrate), a SiC base film (silicon carbide base film) which is stacked on the Si substrate and contains silicon carbide, a defective part (through-hole) which passes through the SiC base film, a hole which is located between the Si substrate and the SiC base film corresponding to the defective part, and an oxide film which is provided on the surface of the Si substrate in the hole and contains silicon oxide. Further, on the SiC base film, a SiC grown layer (silicon carbide grown layer) may be formed.