The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2018
Filed:
Jun. 19, 2009
Arun Majumdar, Orinda, CA (US);
Ali Shakouri, Santa Cruz, CA (US);
Timothy D. Sands, Moraga, CA (US);
Peidong Yang, Berkeley, CA (US);
Samuel S. Mao, Berkeley, CA (US);
Richard E. Russo, Walnut Creek, CA (US);
Henning Feick, Kensington, CA (US);
Eicke R. Weber, Oakland, CA (US);
Hannes Kind, Schaffhausen, CH;
Michael Huang, Los Angeles, CA (US);
Haoquan Yan, Albany, CA (US);
Yiying Wu, Albany, CA (US);
Rong Fan, El Cerrito, CA (US);
Arun Majumdar, Orinda, CA (US);
Ali Shakouri, Santa Cruz, CA (US);
Timothy D. Sands, Moraga, CA (US);
Peidong Yang, Berkeley, CA (US);
Samuel S. Mao, Berkeley, CA (US);
Richard E. Russo, Walnut Creek, CA (US);
Henning Feick, Kensington, CA (US);
Eicke R. Weber, Oakland, CA (US);
Hannes Kind, Schaffhausen, CH;
Michael Huang, Los Angeles, CA (US);
Haoquan Yan, Albany, CA (US);
Yiying Wu, Albany, CA (US);
Rong Fan, El Cerrito, CA (US);
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);
Abstract
One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as 'nanowires', include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).