The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2018

Filed:

Jun. 13, 2016
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

Cheol-Se Kim, Daegu, KR;

Jae-Hyung Jo, Busan, KR;

Duk-Keun Yoo, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/136 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/45 (2006.01); G02F 1/1362 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1288 (2013.01); H01L 27/124 (2013.01); H01L 27/1214 (2013.01); H01L 27/1255 (2013.01); H01L 29/458 (2013.01); H01L 29/78669 (2013.01); H01L 29/78696 (2013.01); G02F 2001/136231 (2013.01); G02F 2001/136236 (2013.01); G02F 2001/136295 (2013.01); G02F 2202/103 (2013.01);
Abstract

A method of fabricating an array substrate for a liquid crystal display device can include forming a gate line and a gate electrode, and a gate insulating layer; forming an active layer on the gate insulating layer and an ohmic contact layer on the active layer; forming a data line and source and drain electrodes; forming a passivation layer on the source and drain electrodes; and forming a pixel electrode on the passivation layer, in which the ohmic contact layer covers an entire top surface of the active layer between the source and drain electrodes; forming a metallic layer on the gate insulating layer and the ohmic contact layer; etching the metallic layer to faun the data line, and the source drain electrodes, in which a silicide layer is formed on the ohmic contact layer only in the space between the source and drain electrodes; and removing the silicide layer.


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