The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2018
Filed:
Oct. 27, 2016
Applicant:
Fuji Electric Co., Ltd., Kanagawa, JP;
Inventors:
Tatsuya Naito, Matsumoto, JP;
Masahito Otsuki, Matsumoto, JP;
Assignee:
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/06 (2006.01); H01L 21/822 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01); H01L 27/04 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H03K 17/08 (2006.01); H01L 29/423 (2006.01); H01L 29/739 (2006.01); H02H 3/08 (2006.01); H03K 17/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0635 (2013.01); H01L 21/822 (2013.01); H01L 21/8234 (2013.01); H01L 27/04 (2013.01); H01L 27/06 (2013.01); H01L 27/088 (2013.01); H01L 29/06 (2013.01); H01L 29/0634 (2013.01); H01L 29/4236 (2013.01); H01L 29/7397 (2013.01); H01L 29/78 (2013.01); H01L 29/7827 (2013.01); H02H 3/08 (2013.01); H03K 17/08 (2013.01); H03K 17/122 (2013.01); H03K 17/127 (2013.01);
Abstract
To improve a tradeoff between ON voltage and ON/OFF loss while maintaining short-circuit tolerance, provided is a semiconductor device including an IGBT element; a super junction transistor element connected in parallel with the IGBT element; and a limiting section that limits a voltage applied to a gate terminal of the IGBT element more than a voltage applied to a gate terminal of the super junction transistor element.