The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2018
Filed:
Jul. 27, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
The Board of Trustees of the Leland Stanford Junior University, Stanford, CA (US);
Ki-Hyun Kim, Yongin-si, KR;
Friedrich B. Prinz, Stanford, CA (US);
Jinsung Kang, Seoul, KR;
Youngdong Lee, Suwon-si, KR;
John Provine, Stanford, CA (US);
Peter Schindler, Stanford, CA (US);
Stephen P. Walch, Stanford, CA (US);
Yongmin Kim, Stanford, CA (US);
Hyo Jin Kim, Stanford, CA (US);
Samsung Electronics Co., Ltd., , KR;
The Board of Trustees of the Leland Stanford Junior University, Stanford, CA (US);
Abstract
A method of forming a composite dielectric material can be provided by performing a first deposition cycle to form a first dielectric material and performing a second deposition cycle to form a second dielectric material on the first dielectric material, wherein the first and second dielectric materials comprise different dielectric materials selected from a list consisting of a transition metal nitride, a transition metal oxide, a transition metal carbide, a transition metal silicide, a post-transition metal nitride, a post-transition metal oxide, a post-transition metal carbide, a post-transition metal silicide, a metalloid nitride, a metalloid oxide, and a metalloid carbide.