The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2018

Filed:

Aug. 03, 2016
Applicant:

Rohm Co., Ltd., Kyoto-shi, Kyoto, JP;

Inventors:

Katsuhiko Yoshihara, Kyoto, JP;

Masao Saito, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/48 (2006.01); H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 25/07 (2006.01); H01L 21/52 (2006.01); H01L 23/495 (2006.01); H01L 23/498 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/4825 (2013.01); H01L 21/52 (2013.01); H01L 23/48 (2013.01); H01L 23/49562 (2013.01); H01L 23/49582 (2013.01); H01L 23/49586 (2013.01); H01L 23/49861 (2013.01); H01L 24/36 (2013.01); H01L 24/40 (2013.01); H01L 25/0655 (2013.01); H01L 25/072 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/40137 (2013.01); H01L 2224/40139 (2013.01); H01L 2224/40225 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48139 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48472 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/00011 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/181 (2013.01);
Abstract

The power module includes: a first metallic circuit pattern, a semiconductor device disposed on the first metallic circuit pattern; a leadframe electrically connected to the semiconductor device; and a stress buffering layer disposed on an upper surface of the semiconductor device, and capable of buffering a CTE difference between the semiconductor device and the leadframe. The leadframe is connected to the semiconductor device via the stress buffering layer, a CTE of the stress buffering layer is equal to or less than a CTE of the leadframe, and a cross-sectional shape of the stress buffering layer is L-shape. There is provided: the power module capable of realizing miniaturization and large current capacity, and reducing cost thereof by using leadframe structure, and capable of reducing a variation in welding and improving a yield without damaging a semiconductor device; and a fabrication method for such a power module.


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