The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2018

Filed:

Jan. 07, 2014
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Hemanth Jagannathan, Guilderland, NY (US);

Vamsi K. Paruchuri, New York, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/51 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 23/485 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28229 (2013.01); H01L 21/823842 (2013.01); H01L 21/823871 (2013.01); H01L 21/845 (2013.01); H01L 23/485 (2013.01); H01L 27/092 (2013.01); H01L 29/518 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Gate electrodes having different work functions can be provided by providing conductive metallic nitride layers having different thicknesses in a replacement gate scheme. Upon removal of disposable gate structures and formation of a gate dielectric layer, at least one incremental thickness conductive metallic nitride layer is added within some gate cavities, while not being added in some other gate cavities. A minimum thickness conductive metallic nitride layer is subsequently added as a contiguous layer. Conductive metallic nitride layers thus formed have different thicknesses across different gate cavities. A gate fill conductive material layer is deposited, and planarization is performed to provide multiple gate electrode having different conductive metallic nitride layer thicknesses. The different thicknesses of the conductive metallic nitride layers can provide different work functions having a range of about 400 mV.


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