The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2018
Filed:
Dec. 11, 2014
Applicant:
Asahi Glass Company, Limited, Chiyoda-ku, JP;
Inventors:
Kazuhiro Ito, Chiyoda-ku, JP;
Satoru Watanabe, Chiyoda-ku, JP;
Toshinari Watanabe, Chiyoda-ku, JP;
Naomichi Miyakawa, Chiyoda-ku, JP;
Assignee:
Asahi Glass Company, Limited, Chiyoda-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
C04B 35/44 (2006.01); H01J 37/34 (2006.01); H01B 1/08 (2006.01); C23C 14/34 (2006.01); C04B 35/626 (2006.01); C04B 35/645 (2006.01); C04B 37/02 (2006.01); C01F 7/16 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3426 (2013.01); C01F 7/164 (2013.01); C04B 35/44 (2013.01); C04B 35/6261 (2013.01); C04B 35/6455 (2013.01); C04B 37/021 (2013.01); C23C 14/3414 (2013.01); H01B 1/08 (2013.01); C01P 2006/40 (2013.01); C01P 2006/80 (2013.01); C04B 2235/3208 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/442 (2013.01); C04B 2235/444 (2013.01); C04B 2235/445 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/6562 (2013.01); C04B 2235/6565 (2013.01); C04B 2235/6567 (2013.01); C04B 2235/6581 (2013.01); C04B 2235/6587 (2013.01); C04B 2235/664 (2013.01); C04B 2235/77 (2013.01); C04B 2237/343 (2013.01); C04B 2237/402 (2013.01); C04B 2237/50 (2013.01);
Abstract
A production method of an electroconductive mayenite compound having an electron density greater than or equal to 5×10cmincludes preparing an object of processing containing a mayenite compound or a precursor of a mayenite compound, placing aluminum foil on at least part of a surface of the object of processing, and retaining the object of processing at temperatures falling within the range of 1080° C. to 1450° C. in a low oxygen partial pressure atmosphere.