The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2018
Filed:
Feb. 16, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Eun Chu Oh, Hwaseong-si, KR;
Young-Geon Yoo, Seoul, KR;
Jun Jin Kong, Yongin-si, KR;
Hong-Rak Son, Anyang-si, KR;
Han-Shin Shin, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method is for operating a resistive memory system including a resistive memory device implemented as multi-level memory cells. The method includes setting levels of reference voltages used to determine resistance states of the multi-level memory cells, and reading data of the multi-level memory cells based on the reference voltages. A difference between the reference voltages used to determine a relatively high resistance state is greater than a difference between the reference voltages used to determine a relatively low resistance state.