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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9880470 B1

PDFFull Text
Date of Patent:
Jan. 30, 2018

Filed:

Sep. 16, 2015

Composition for forming a coating type silicon-containing film, substrate, and patterning process

Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Seiichiro Tachibana, Jyoetsu, JP;

Yoshinori Taneda, Jyoetsu, JP;

Rie Kikuchi, Jyoetsu, JP;

Tsutomu Ogihara, Jyoetsu, JP;

Assignee:

SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

Alexander Ghyka

Int. Cl.
CPC ...
C09D 183/00 (2006.01); G03F 7/11 (2006.01); H01L 21/3213 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01); C09D 183/10 (2006.01); C08G 77/48 (2006.01); G03F 7/075 (2006.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); C08G 77/48 (2013.01); C09D 183/10 (2013.01); G03F 7/0752 (2013.01); H01L 21/02126 (2013.01); H01L 21/02211 (2013.01); H01L 21/02216 (2013.01); H01L 21/02282 (2013.01); H01L 21/0332 (2013.01); H01L 21/3081 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01);
Abstract

A composition for forming a coating type silicon-containing film, containing one or more silicic acid skeletal structures represented by the formula (1) and one or more silicon skeletal structures represented by the formula (2), wherein the composition contains a coupling between units shown in the formula (2). There can be provided a composition capable of forming a silicon-containing film that has excellent adhesiveness in fine patterning, and can be easily wet etched by a removing liquid which does not cause damage to a semiconductor substrate and a coating type organic film or a CVD film mainly of carbon which is required in the patterning process.

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