The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2018

Filed:

Feb. 13, 2015
Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, JP;

Inventors:

Hideaki Katakura, Matsumoto, JP;

Yoshiaki Toyoda, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-shi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 27/08 (2006.01); G01R 15/04 (2006.01); G01R 19/00 (2006.01); G01R 1/20 (2006.01);
U.S. Cl.
CPC ...
G01R 15/04 (2013.01); G01R 1/203 (2013.01); G01R 19/0092 (2013.01);
Abstract

Current detection circuit of a semiconductor device provided with a shunt resistor, a voltage division ratio adjustment resistor and a selection circuit which selects a voltage division ratio of the latter and has enhancement type MOSFETs and Zener Zaps as trimming elements. One of the Zener Zaps is trimmed and a divided voltage of the voltage division ratio adjustment resistor connected in parallel with the shunt resistor is outputted. The detected voltage in which variation of the resistance of the shunt resistor has been cancelled is therefore outputted. As the shunt resistor and the voltage division ratio adjustment resistor are laminated together, it is possible to obtain a current detection circuit with a small area, which can detect a current flowing into a shunt resistor with high accuracy.


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