The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2018
Filed:
Apr. 25, 2014
Applicant:
Maps, Inc., Yongin-si, KR;
Inventors:
Jong-Tae Hwang, Seoul, KR;
Hyun-Ick Shin, Seoul, KR;
Sang-O Jeon, Suwon-si, KR;
Joon Rhee, Seoul, KR;
Assignee:
MAPS, Inc., Yongin-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/74 (2006.01); H02M 7/219 (2006.01); H02M 7/217 (2006.01); H03K 3/012 (2006.01); H03K 17/13 (2006.01); H03K 17/687 (2006.01); H02M 1/08 (2006.01); H02M 1/00 (2006.01); H03K 17/30 (2006.01);
U.S. Cl.
CPC ...
H03K 17/74 (2013.01); H02M 1/08 (2013.01); H02M 7/217 (2013.01); H02M 7/219 (2013.01); H03K 3/012 (2013.01); H03K 17/133 (2013.01); H03K 17/687 (2013.01); H02M 2001/0009 (2013.01); H02M 2001/0051 (2013.01); H03K 2017/307 (2013.01); Y02B 70/1491 (2013.01);
Abstract
An active diode having an improved transistor turn-off control method is disclosed. The active diode comprises: a comparator for comparing voltages of both ends of a parasitic diode of a transistor; and a gate driver for controlling a gate terminal of the transistor according to the comparison result of the comparator, and estimates a turn-on time of the transistor and uses the same to control the gate terminal of the transistor.