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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9876147 B1

PDFFull Text
Date of Patent:
Jan. 23, 2018

Filed:

Jun. 03, 2016

Semiconductor light emitting element and method of manufacturing the same

Applicant:

Nichia Corporation;

Inventors:

Hirofumi Kawaguchi, Tokushima, JP;

Akinori Yoneda, Anan, JP;

Hisashi Kasai, Tokushima, JP;

Kazuki Kashimoto, Tokushima, JP;

Masafumi Itasaka, Komatsushima, JP;

Assignee:

NICHIA CORPORATION, Anan-shi, JP;

Attorney:

Squire Patton Boggs (US) LLP

Primary Examiner:

Su C Kim

Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/40 (2010.01); H01L 33/38 (2010.01); H01L 33/36 (2010.01); H01L 33/42 (2010.01);
U.S. Cl.
CPC ...
H01L 33/405 (2013.01); H01L 33/36 (2013.01); H01L 33/38 (2013.01); H01L 33/382 (2013.01); H01L 33/42 (2013.01); H01L 2933/0016 (2013.01);
Abstract

A semiconductor light emitting element having: a semiconductor laminated body; a full surface electrode containing an Ag provided on an upper surface of the p-type semiconductor layer; a cover electrode that covers a surface of the full surface electrode, is provided to contact on the upper surface of the p-type semiconductor layer at an outer edge of the full surface electrode, and is made of an Al-based metal material; a p-side electrode that is provided on a portion of a surface of the cover electrode; a metal oxide film that covers other surfaces of the cover electrode and contains an oxide of a metal material forming the cover electrode; and an insulation film that is made of an oxide and covers a surface of the metal oxide film, is provided.

Find Patent Forward Citations

Kawaguchi, Hirofumi. (2018). Semiconductor light emitting element and method of manufacturing the same (U.S. Patent No. 9876147). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9876147

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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