The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2018
Filed:
May. 13, 2016
Rohm Co., Ltd., Kyoto, JP;
Hirotaka Obuchi, Kyoto, JP;
Kazuaki Tsutsumi, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A semiconductor light emitting device includes: an n-type layer; a p-type layer; and an emission layer interposed between the n-type layer and the p-type layer and having a multiple quantum well (MQW) structure in which barrier layers and quantum well layers are alternately stacked over a plurality of periods, wherein n-type impurity concentrations of the barrier layers disposed up to a predetermined α-th layer (where α is a natural number), when counting from the p-type layer, are smaller than an n-type impurity concentration of the barrier layer disposed at an (α+1)-th layer counting from the p-type layer.