The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2018
Filed:
Oct. 18, 2016
Applicant:
Lapis Semiconductor Co., Ltd., Kanagawa, JP;
Inventor:
Masao Okihara, Kanagawa, JP;
Assignee:
LAPIS SEMICONDUCTOR CO., LTD., Yokohama, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04N 5/335 (2011.01); H01S 5/06 (2006.01); H01L 33/50 (2010.01); H01L 31/103 (2006.01); H01L 31/0352 (2006.01); H01L 31/0264 (2006.01); H01L 31/0216 (2014.01); G02B 5/28 (2006.01); H01L 31/02 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02165 (2013.01); G02B 5/283 (2013.01); H01L 31/02019 (2013.01); H01L 31/02164 (2013.01); H01L 31/103 (2013.01); H01L 31/1804 (2013.01);
Abstract
A semiconductor device that includes: a pair of photoelectric transducers that output photocurrent that accords with an intensity of received light; and a first filter film that is provided to a light incidence side of one out of the pair of photoelectric transducers, that is configured by alternatingly stacking high refractive index layers and low refractive index layers having mutually different refractive indexes, and that transmits one out of either UV-A waves or UV-B waves included in ultraviolet rays with a higher transmittance than the other out of the UV-A waves and the UV-B waves.