The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2018
Filed:
May. 11, 2015
Rohm Co., Ltd., Kyoto-shi, Kyoto, JP;
Masatoshi Aketa, Kyoto, JP;
Yoshikatsu Miura, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
This semiconductor device includes: a semiconductor layer that is formed of first conductivity-type SiC; a plurality of trenches that are formed in the semiconductor layer; second conductivity-type column regions that are formed along the inner surfaces of the trenches; a first conductivity-type column region that is disposed between the adjacent second conductivity-type column regions; and insulating films that are embedded in the trenches. The semiconductor device is capable of improving a withstand voltage by means of a super junction structure. The semiconductor device may also include an electric field attenuation section for attenuating electric field intensity of a surface section of the first conductivity-type column region.