The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2018
Filed:
Jan. 29, 2016
Wuhan China Star Optoelectronics Technology Co., Ltd., Wuhan, CN;
Gui Chen, Wuhan, CN;
Qiang Gong, Wuhan, CN;
WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Wuhan, Hubei, CN;
Abstract
The present invention provides a LTPS TFT substrate and a manufacturing method thereof. The LTPS TFT substrate of the present invention includes a metal layer formed on a channel zone so that the metal layer, a source electrode, and a drain electrode can be used as a mask to form LDD zones in a poly-silicon layer in order to save the mask needed for separately forming the LDD zones; further, due to the addition of the metal layer that is connected to the channel zone of the poly-silicon layer, the electrical resistance of the channel zone can be effectively reduced to increase a TFT on-state current. The LTPS TFT substrate manufacturing method of the present invention forms a metal layer on a channel zone at the same time of forming a source electrode and a drain electrode and uses the metal layer, the source electrode, and the drain electrode as a mask to form LDD zones in a poly-silicon layer so as to save the mask needed for separately forming the LDD zones thereby reducing the manufacturing cost and increasing throughput.