The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2018
Filed:
Nov. 25, 2015
Applicant:
Infineon Technologies Dresden Gmbh, Dresden, DE;
Inventors:
Assignee:
Infineon Technologies Dresden GmbH, Dresden, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/40 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 21/823487 (2013.01); H01L 27/0883 (2013.01); H01L 29/1095 (2013.01); H01L 29/41766 (2013.01); H01L 29/66734 (2013.01); H01L 29/7809 (2013.01); H01L 29/407 (2013.01); H01L 29/7397 (2013.01);
Abstract
A semiconductor device includes a buried doped region at a first distance to a main surface of a semiconductor body. A contact structure extends from the main surface to the doped region. The contact structure includes a contact layer formed from a metal-semiconductor alloy that directly adjoins the doped region. The contact structure further includes a fill structure formed from a metal or a conductive metal compound. An insulator structure surrounds the contact structure in cross-sections parallel to the main surface.