The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2018
Filed:
Sep. 02, 2015
Mitsubishi Electric Research Laboratories, Inc., Cambridge, MA (US);
Koon Hoo Teo, Lexington, MA (US);
Yuhao Zhang, Cambridge, MA (US);
Mitsubishi Electric Research Laboratories, Inc., Cambridge, MA (US);
Abstract
A semiconductor device includes a layered structure forming multiple carrier channels including at least one n-type channel formed in a first layer made of a first material and at least one p-type channel formed in a second layer made of a second material and a set of electrodes for providing and controlling carrier charge in the carrier channels. The first material is different than the second material, and the first and the second materials are selected such that the n-type channel and the p-type channel have comparable switching frequency and current capability.