The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2018
Filed:
Feb. 29, 2016
Applicant:
Ams Ag, Unterpremstaetten, AT;
Inventor:
Georg Roehrer, Lebring, AT;
Assignee:
ams AG, Unterpremstaetten, AT;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 21/266 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66681 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/402 (2013.01); H01L 29/42368 (2013.01); H01L 29/66659 (2013.01); H01L 29/7835 (2013.01); H01L 21/266 (2013.01); H01L 29/0692 (2013.01); H01L 29/1045 (2013.01);
Abstract
An isolation area () is provided over a drift region () with a spacing (d) to a contact area () provided for a drain connection (D). The isolation area is used as an implantation mask, in order to produce a dopant profile of the drift region in which the dopant concentration increases toward the drain. The implantation of the dopant can be performed instead before the production of the isolation area, and the later production of the isolation area () changes the dopant profile also in a way that the dopant concentration increases toward the drain.