IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9876080 B1

PDFFull Text
Date of Patent:
Jan. 23, 2018

Filed:

Jul. 25, 2016

Strained group iv channels

Applicant:

Imec Vzw, Leuven, BE;

Inventors:

Bernardette Kunert, Wilsele, BE;

Robert Langer, Leuven, BE;

Geert Eneman, Balen, BE;

Assignee:

IMEC VZW, Leuven, BE;

Attorney:

McDonnell Boehnen Hulbert & Berghoff LLP

Primary Examiner:

Yosef Gebreyesus

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/04 (2006.01); H01L 21/324 (2006.01); H01L 21/306 (2006.01); H01L 29/161 (2006.01); H01L 29/775 (2006.01); H01L 29/06 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1054 (2013.01); H01L 21/02455 (2013.01); H01L 21/02469 (2013.01); H01L 21/02513 (2013.01); H01L 21/02524 (2013.01); H01L 21/02532 (2013.01); H01L 21/30612 (2013.01); H01L 21/3245 (2013.01); H01L 29/045 (2013.01); H01L 29/161 (2013.01); H01L 29/42356 (2013.01); H01L 21/02381 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 29/0673 (2013.01); H01L 29/775 (2013.01);
Abstract

Disclosed herein is a semiconductor structure including: (i) a monocrystalline substrate having a top surface, (ii) a non-crystalline structure overlying the monocrystalline substrate and including an opening having a width smaller than 10 microns and exposing part of the top surface of the monocrystalline substrate. The semiconductor structure also includes (iii) a buffer structure having a bottom surface abutting the part and a top surface having less than 10threading dislocations per cm, the buffer structure being made of a material having a first lattice constant. The semiconductor structure also includes (iv) one or more group IV monocrystalline structures abutting the buffer structure and that are made of a material having a second lattice constant, different from the first lattice constant.

Find Patent Forward Citations

Loading…