The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2018
Filed:
Oct. 17, 2013
Nissan Motor Co., Ltd., Yokohama-shi, Kanagawa, JP;
Toshiharu Marui, Yokohama, JP;
Tetsuya Hayashi, Yokosuka, JP;
Shigeharu Yamagami, Blacksburg, VA (US);
Wei Ni, Yokohama, JP;
Kenta Emori, Yokosuka, JP;
NISSAN MOTOR CO., LTD., Yokohama-shi, JP;
Abstract
A semiconductor device () comprises: a semiconductor substrate (); a drift region () of a first conductivity type having a trench in part of an upper portion thereof and arranged on a first main surface of the semiconductor substrate (); an electric field reducing region () of a second conductivity type arranged, in a bottom portion of the trench, only around a corner portion and not in a center portion; an anode electrode () embedded in the trench; and a cathode electrode () arranged on a second main surface of the semiconductor substrate () which is opposite to the first main surface.