The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2018
Filed:
May. 18, 2017
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A high-voltage semiconductor device is provided. The device includes a semiconductor substrate including a high-voltage well region. The device further includes a gate dielectric structure and a gate. The gate dielectric structure includes a first dielectric layer over the high-voltage well region and a second dielectric layer over the first dielectric layer. The second dielectric layer has a U-shaped or ring-shaped contour as viewed from a top-view aspect, so as to form an opening exposing the first dielectric layer. The gate is disposed over the second dielectric layer and extends onto the exposed first dielectric layer via the opening. The device further includes a drift doping region in the high-voltage well region and a source/drain doping region in the drift doping region. A method for fabricating the high-voltage semiconductor device is also provided.