The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2018
Filed:
Nov. 24, 2015
Applicant:
Seiko Epson Corporation, Tokyo, JP;
Inventor:
Manabu Kudo, Suwa, JP;
Assignee:
Seiko Epson Corporation, , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 25/04 (2014.01); H01L 31/0224 (2006.01); H01L 31/032 (2006.01); H01L 31/109 (2006.01); H01L 31/14 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14649 (2013.01); H01L 25/043 (2013.01); H01L 27/14623 (2013.01); H01L 27/14632 (2013.01); H01L 27/14634 (2013.01); H01L 27/14687 (2013.01); H01L 27/14689 (2013.01); H01L 31/0224 (2013.01); H01L 31/022408 (2013.01); H01L 31/0322 (2013.01); H01L 31/109 (2013.01); H01L 31/145 (2013.01); H01L 2924/0002 (2013.01); Y02E 10/541 (2013.01); Y02P 70/521 (2015.11);
Abstract
An image sensor as a photoelectric conversion device includes: a lower electrode containing a high-melting-point metal; an upper electrode disposed in a layer higher than the lower electrode; a p-type semiconductor layer and an n-type semiconductor layer disposed between the lower electrode and the upper electrode; and a relay electrode containing the high-melting-point metal. The lower electrode and the relay electrode are formed in the same layer. An intermediate layer as a selenized film of the high-melting-point metal is formed on the lower electrode.