The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 23, 2018

Filed:

Apr. 20, 2016
Applicant:

Cista System Corp., San Jose, CA (US);

Inventors:

Hirofumi Komori, San Jose, CA (US);

Jingyi Bai, San Jose, CA (US);

Assignee:

CISTA SYSTEM CORP., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1464 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14643 (2013.01); H01L 27/14685 (2013.01);
Abstract

An image sensor including at least one pixel for collecting charge in its photodiode is provided. The image sensor comprises: a substrate having a first surface on a front side and a second surface on a back side, a photodetector formed in the silicon substrate and having a light-receiving surface on the second surface, and a first layer with positive charges disposed on the second surface, the first layer being configured to form an electron accumulation region at the light-receiving surface of the photodetector for suppressing a dark current at a back side interface of the image sensor. A method for fabricating an image sensor including a first layer with positive charges is also provided.


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