The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9876028 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 23, 2018

Filed:

Sep. 15, 2016
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventor:

Satoshi Konagai, Kasugai, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 27/11582 (2017.01); H01L 27/11565 (2017.01); H01L 23/528 (2006.01); H01L 27/11563 (2017.01); H01L 27/11553 (2017.01); H01L 27/11551 (2017.01); H01L 27/11556 (2017.01); H01L 27/11524 (2017.01); H01L 27/1157 (2017.01); H01L 27/11568 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 23/5283 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 27/11551 (2013.01); H01L 27/11553 (2013.01); H01L 27/11556 (2013.01); H01L 27/11563 (2013.01); H01L 27/11565 (2013.01); H01L 27/11568 (2013.01);
Abstract

The memory string comprises: a plurality of control gate electrodes stacked on the substrate and extending in a first direction and a second direction parallel to the substrate; a semiconductor layer that has one end thereof connected to the substrate, has as its longitudinal direction a third direction perpendicular to the substrate, and faces the plurality of control gate electrodes; and a charge accumulation layer positioned between the control gate electrode and the semiconductor layer. The contact includes, in the third direction, a first portion, a second portion which is more to a substrate side than is the first portion, and a third portion which is more to the substrate side than is the second portion. A width of the second portion is larger than a width of the first portion, and larger than a width of the third portion.


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