The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2018
Filed:
Mar. 03, 2017
Applicant:
Toshiba Memory Corporation, Minato-ku, Tokyo, JP;
Inventors:
Tomo Hasegawa, Yokkaichi Mie, JP;
Kazuhisa Matsuda, Yokkaichi Mie, JP;
Toshiyuki Sasaki, Yokkaichi Mie, JP;
Mitsuhiro Omura, Kuwana Mie, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 27/11568 (2017.01); H01L 21/3065 (2006.01); H01L 21/027 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11568 (2013.01); H01L 21/0273 (2013.01); H01L 21/28282 (2013.01); H01L 21/3065 (2013.01);
Abstract
A method for manufacturing a semiconductor device includes forming a resist film on a film to be processed. An upper portion of the film to be processed is processed using the resist film as a first mask. Tungsten or a tungsten compound is selectively formed on the resist film. A lower portion of the film to be processed is processed with a reducing gas using the tungsten or the tungsten compound as a second mask.