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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9876001 B1

PDFFull Text
Date of Patent:
Jan. 23, 2018

Filed:

Mar. 17, 2017

Method for producing an optoelectronic semiconductor chip

Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Britta Goeoetz, Regensburg, DE;

Ion Stoll, Tegernheim, DE;

Norwin von Malm, Nittendorf, DE;

Assignee:

OSRAM Opto Semiconductors GmbH, Regensburg, DE;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Bradley K Smith

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 25/16 (2006.01); H01L 33/50 (2010.01); C25D 13/12 (2006.01); C25D 13/02 (2006.01); C25D 13/22 (2006.01); H01L 27/15 (2006.01);
U.S. Cl.
CPC ...
H01L 25/167 (2013.01); C25D 13/02 (2013.01); C25D 13/12 (2013.01); C25D 13/22 (2013.01); H01L 33/502 (2013.01); H01L 33/505 (2013.01); H01L 27/156 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0041 (2013.01);
Abstract

A method for producing an optoelectronic semiconductor chip is disclosed. In an embodiment, the method includes providing a semiconductor body with a pixel region including different subpixel regions, each subpixel region having a radiation exit face, applying an electrically conductive layer onto the radiation exit face of a subpixel region, wherein the electrically conductive layer is suitable at least in part for forming a salt with a protic reactant, and depositing a conversion layer on the electrically conductive layer using an electrophoresis process, wherein the deposited conversion layer comprises pores.

Find Patent Forward Citations

Goeoetz, Britta. (2018). Method for producing an optoelectronic semiconductor chip (U.S. Patent No. 9876001). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9876001

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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