The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2018
Filed:
Mar. 10, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Inventors:
Myung-ho Kong, Hwaseong-si, KR;
Jeong-hee Park, Hwaseong-si, KR;
Taek-jung Kim, Seoul, KR;
Han-young Kim, Anyang-si, KR;
Keon-seok Seo, Suwon-si, KR;
Jong-myeong Lee, Seongnam-si, KR;
Hee-sook Park, Hwaseong-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/74 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/743 (2013.01); H01L 29/4236 (2013.01); H01L 29/78 (2013.01); H01L 21/76897 (2013.01);
Abstract
A method of fabricating a semiconductor device includes forming a doped polysilicon layer on a substrate, forming a barrier layer on the doped polysilicon layer, forming an oxidized barrier layer by oxidizing a surface of the barrier layer, and forming a metal layer on the oxidized barrier layer.