The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2018
Filed:
Jul. 24, 2013
Microsoft Corporation, Redmond, WA (US);
John D. Davis, San Francisco, CA (US);
Karin Strauss, Seattle, WA (US);
Mark Steven Manasse, San Francisco, CA (US);
Parikshit S. Gopalan, Mountain View, CA (US);
Sergey Yekhanin, Mountain View, CA (US);
Microsoft Technology Licensing, LLC, Redmond, WA (US);
Abstract
A memory region can durably self-identify as being faulty when read. Information that would have been assigned to the faulty memory region can be assigned to another of that sized region in memory using a replacement encoding technique. For phase change memory, at least two fault states can be provided for durably self-identifying a faulty memory region; one state at a highest resistance range and the other state at a lowest resistance range. Replacement cells can be used to shift or assign data when a self-identifying memory fault is present. A memory controller and memory module, alone or in combination may manage replacement cell use and facilitate driving a newly discovered faulty cell to a fault state if the faulty cell is not already at the fault state.