The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2018
Filed:
Jul. 31, 2017
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Dae-Jin Kwon, Seongnam-Si, KR;
Kang-Ill Seo, Chungcheongbuk-do, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
Provided are a semiconductor device. The semiconductor device includes an SRAM cell including a first pull-up transistor, a first pull-down transistor and a first pass transistor formed on a substrate, a first read buffer transistor connected to gate terminals of the first pull-up transistor and the first pull-down transistor, and a second read buffer transistor which shares a drain terminal with the first read buffer transistor, wherein the first read buffer transistor includes a first channel pattern extending in a first direction vertical to an upper surface of the substrate, a first gate electrode which covers a part of the first channel pattern, and a first drain pattern which does not contact the first gate electrode, and which extends in the first direction, and which is connected to the first channel pattern.