The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2018
Filed:
Jul. 16, 2015
Applicants:
Dong Hwan Lee, Namyangju-si, KR;
Jun Jin Kong, Yongin-si, KR;
Chang Kyu Seol, Osan-si, KR;
Hong Rak Son, Anyang-si, KR;
Inventors:
Dong Hwan Lee, Namyangju-si, KR;
Jun Jin Kong, Yongin-si, KR;
Chang Kyu Seol, Osan-si, KR;
Hong Rak Son, Anyang-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 3/00 (2006.01); G06F 3/06 (2006.01); G06F 17/30 (2006.01); G06F 12/02 (2006.01); G06F 21/79 (2013.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0619 (2013.01); G06F 3/065 (2013.01); G06F 3/068 (2013.01); G06F 3/0653 (2013.01); G06F 12/0246 (2013.01); G06F 17/3033 (2013.01); G06F 17/30867 (2013.01); G06F 21/79 (2013.01); G11C 16/0466 (2013.01);
Abstract
A method is provided for operating a data storage device capable of compensating for an initial threshold voltage shift of multiple memory cells. The method includes generating a first compression value for a first write address corresponding to a first write request input during a first time interval among different time intervals, and storing the first compression value in a first table among multiple tables.