The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2018
Filed:
May. 27, 2015
Analog Devices, Inc., Norwood, MA (US);
Alexandru A. Ciubotaru, Somerset, NJ (US);
Analog Devices, Inc., Norwood, MA (US);
Abstract
A self-biased cascode current mirror/scaler circuit can include a bias FET biased with an input current to generate a gate-source voltage, which can be divided by a bias circuit into a first voltage component (e.g., at a threshold voltage) and a second voltage component (at a FET drain-source saturation voltage or edge of saturation voltage). An input FET of the current mirror/scaler circuit can receive approximately the input current or a function thereof. A gate of the input FET can be biased at the first voltage component in sum with a FET drain-source saturation voltage or edge of saturation voltage of the input FET. A gate of the output FET can be connected to the gate of the input FET. A gate of a cascode FET in series with the output FET can be biased at the first voltage component in sum with the second voltage component in sum with the FET drain-source saturation voltage or edge of saturation voltage of the input FET. Multiple cascode FETs, multiple output stages, high frequency bypass capacitors, and lowpass filters are also described.