The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 23, 2018

Filed:

Jun. 13, 2014
Applicant:

Ihp Gmbh-innovations for High Performance Microelectronics/leibniz-institut Fur Innovative Mikroelektronik, Frankfurt, DE;

Inventors:

Wolfgang Mehr, Friedersdorf, DE;

Andre Wolff, Frankfurt, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); C23F 4/00 (2006.01); H01J 37/073 (2006.01); H01J 1/304 (2006.01); H01J 9/02 (2006.01); H01J 37/32 (2006.01); B81C 1/00 (2006.01); C23C 16/50 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
C23F 4/00 (2013.01); B81C 1/00111 (2013.01); C23C 16/50 (2013.01); H01J 1/3044 (2013.01); H01J 9/025 (2013.01); H01J 37/073 (2013.01); H01J 37/32963 (2013.01); H01J 37/32981 (2013.01); H01L 21/3065 (2013.01); H01L 21/3081 (2013.01); H01J 2201/30411 (2013.01); H01J 2209/0226 (2013.01); H01J 2237/334 (2013.01);
Abstract

A method for producing a nanotip from a tip material provides a substrate which consists of the tip material or has the material in the form of a coating, produces a mask from a mask material selected so that, in a predefined reactive ion etching process, the mask material is removed at a lower etching rate than the tip material, and carries out the reactive ion etching process in an etching chamber. The mask material is additionally selected so that a gaseous component is released therefrom during the reactive ion etching process, the gaseous component not being released from the tip material. The method further comprises detecting the gaseous component while the ion etching process is being carried out, repeatedly determining whether an amount of the gaseous component in the etching chamber reaches a predefined lower threshold, and stopping the reactive ion etching process when the lower threshold is reached.


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