The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2018
Filed:
Jan. 09, 2015
Novellus Systems, Inc., Fremont, CA (US);
Jason Dirk Haverkamp, Scotia, NY (US);
Dennis M. Hausmann, Lake Oswego, OR (US);
Kevin M. McLaughlin, Sherwood, OR (US);
Krishnan Shrinivasan, San Jose, CA (US);
Michael Rivkin, Los Altos, CA (US);
Eugene Smargiassi, Tualatin, OR (US);
Mohamed Sabri, Beaverton, OR (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
The present invention provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV intensity, wafer substrate temperature, UV spectral distribution, and other conditions may be independently modulated in each operation. Operations may be pulsed or even be concurrently applied to the same wafer. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first operation to facilitate removal of the porogen and create a porous dielectric film. In a second operation, the film is exposed to UV radiation to increase cross-linking within the porous film.