The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2018
Filed:
Dec. 15, 2014
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Bruce M. Clemens, Stanford, CA (US);
James R. Groves, Sunnyvale, CA (US);
Garrett J. Hayes, Livermore, CA (US);
Bingrui Joel Li, Stanford, CA (US);
Alberto Salleo, San Francisco, CA (US);
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Abstract
A biaxially textured crystalline layer formed on a substrate using ion beam assisted deposition (IBAD) is provided. The biaxially textured crystalline layer includes an oriented CaFcrystalline layer having crystalline grains oriented in both in-plane and out-of-plane directions, where the out-of-plane orientation is a (111) out-of-plane orientation. The oriented CaFcrystalline layer is disposed for growth of a subsequent epitaxial layer and the CaFcrystalline layer is an IBAD CaFlayer. The biaxially textured CaFlayer can be used in a photovoltaic cell, an electronic or optoelectronic device, an integrated circuit, an optical sensor, or a magnetic device.