The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2018

Filed:

Apr. 05, 2016
Applicant:

Xiaomi Inc., Beijing, CN;

Inventors:

Jie Fan, Beijing, CN;

Xinming Shi, Beijing, CN;

Wei Sun, Beijing, CN;

Assignee:

Xiaomi Inc., Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 3/335 (2006.01); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
H02M 3/33592 (2013.01); H02M 2001/0058 (2013.01); Y02B 70/1433 (2013.01); Y02B 70/1475 (2013.01); Y02B 70/1491 (2013.01);
Abstract

A resonant rectifying device includes a transformer having a primary winding and a secondary winding, a primary-side circuit coupled to the primary winding of the transformer, and a secondary-side circuit coupled to the secondary winding of the transformer. The primary-side circuit includes a first field effect transistor (FET) and a second FET coupled in series between a voltage source and a ground, a capacitor, and an inductor. A first side of the capacitor is coupled to a point between the first and the second FETs. A second side of the capacitor is coupled to a first end of the inductor and one end of the primary winding. A second end of the inductor is coupled to the ground. The secondary-side circuit includes a third FET and a fourth FET coupled to a first end and a second end of the secondary winding, respectively.


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