The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2018

Filed:

Aug. 24, 2016
Applicant:

SK Hynix Inc., Icheon-Si, KR;

Inventors:

Hyung-Suk Lee, Icheon-si, KR;

Young-Ju Lee, Icheon-si, KR;

Sook-Joo Kim, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-Si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 43/08 (2006.01); G06F 3/06 (2006.01); G06F 12/0802 (2016.01); G06F 12/0831 (2016.01); G11C 11/16 (2006.01); H01L 43/02 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); G06F 3/0611 (2013.01); G06F 3/0647 (2013.01); G06F 3/0656 (2013.01); G06F 3/0659 (2013.01); G06F 3/0685 (2013.01); G06F 12/0802 (2013.01); G06F 12/0831 (2013.01); G11C 11/161 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01); G06F 2212/60 (2013.01); G06F 2212/621 (2013.01);
Abstract

An electronic device including a semiconductor memory is provided. The semiconductor memory may include an interlayer dielectric layer having a hole; a conductive pattern filled in the hole; and a variable resistance element coupled with the conductive pattern over the conductive pattern and storing different data according to a resistance change, wherein the conductive pattern includes a carbon-containing conductive layer in a region adjacent to the variable resistance element.


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