The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2018

Filed:

Mar. 17, 2016
Applicant:

SK Hynix Inc., Icheon-Si, KR;

Inventor:

Seung-Mo Noh, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-Si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/08 (2006.01); G06F 3/06 (2006.01); G06F 12/0802 (2016.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G06F 3/0604 (2013.01); G06F 3/0629 (2013.01); G06F 3/0656 (2013.01); G06F 3/0679 (2013.01); G06F 12/0802 (2013.01); H01L 43/08 (2013.01); G06F 2212/2024 (2013.01); G06F 2212/60 (2013.01);
Abstract

This technology provides an electronic device and a method for fabricating the same. An electronic device in accordance with an implementation of this document includes semiconductor memory, and the semiconductor memory includes a Magnetic Tunnel Junction (MTJ) structure including a free layer having a variable magnetization direction, a pinned layer having a pinned magnetization direction, and a tunnel barrier layer interposed between the pinned layer and the free layer; a magnetic correction layer located under the MTJ structure and operates to reduce an influence of a stray magnetic field generated by the pinned layer; and an under layer located under the magnetic correction layer and including a metal oxide layer.


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