The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2018

Filed:

Mar. 31, 2014
Applicant:

Koninklijke Philips N.v., Eindhoven, NL;

Inventors:

Brendan Jude Moran, San Jose, CA (US);

Marc Andre de Samber, San Jose, CA (US);

Grigoriy Basin, San Jose, CA (US);

Norbertus Antonius Maria Sweegers, San Jose, CA (US);

Mark Melvin Butterworth, San Jose, CA (US);

Kenneth Vampola, San Jose, CA (US);

Clarisse Mazuir, San Jose, CA (US);

Assignee:

Koninklijke Philips N.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/46 (2010.01); H01L 25/075 (2006.01); H01L 33/20 (2010.01); H01L 33/44 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 33/50 (2010.01); H01L 33/56 (2010.01); H01L 33/62 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/20 (2013.01); H01L 25/0753 (2013.01); H01L 33/007 (2013.01); H01L 33/0079 (2013.01); H01L 33/06 (2013.01); H01L 33/32 (2013.01); H01L 33/44 (2013.01); H01L 33/46 (2013.01); H01L 33/465 (2013.01); H01L 33/502 (2013.01); H01L 33/56 (2013.01); H01L 33/62 (2013.01); H01L 33/0095 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0041 (2013.01); H01L 2933/0066 (2013.01); H01L 2933/0091 (2013.01);
Abstract

Embodiments of the invention include a semiconductor structure including a light emitting layer sandwiched between an n-type region and a p-type region. A growth substrate is attached to the semiconductor structure. The growth substrate has at least one angled sidewall. A reflective layer is disposed on the angled sidewall. A majority of light extracted from the semiconductor structure and the growth substrate is extracted through a first surface of the growth substrate.


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