The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2018

Filed:

Jan. 20, 2015
Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventors:

Takao Fujimori, Kyoto, JP;

Tomohito Kawase, Kyoto, JP;

Yasuo Nakanishi, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/20 (2010.01); H01L 33/42 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/20 (2013.01); H01L 33/382 (2013.01); H01L 33/42 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/49107 (2013.01); H01L 2224/73265 (2013.01);
Abstract

The light emitting deviceincludes a substrate, and an n-type conductive type semiconductor layer, a light emitting layerand a p-type conductive type semiconductor layerlaminated in series on a surfaceA of the substrate. The light emitting layer, the p-type conductive type semiconductor layer, and a portion of the n-type conductive type semiconductor layerexcluding the vicinity of the peripheral portion compose a semiconductor laminate structure portion. A p-side transparent electrode layeris formed on a surface of the p-type conductive type semiconductor layer. The p-side transparent electrodecovers a substantially whole area of a predetermined current injection regionon a surface of the p-type conductive type semiconductor layer. A p-side electrodeis formed on a surface of the p-side transparent electrode layer. A plurality of concave portions, which penetrate the p-side transparent electrode layerand enter the semiconductor laminate structure portion, are formed on a surface of the p-side transparent electrode layer


Find Patent Forward Citations

Loading…